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      Phonon strain shift coefficients in Si1−xGex alloys

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          Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors

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            Lattice Parameter and Density in Germanium-Silicon Alloys1

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              Effect of static uniaxial stress on the Raman spectrum of silicon

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                May 2008
                May 2008
                : 103
                : 9
                : 093521
                Article
                10.1063/1.2913052
                064e3280-f7c3-420d-868c-13ccc4607293
                © 2008
                History

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