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      Strain relaxation in high Ge content SiGe layers deposited on Si

      Author(s): , , , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Relaxation of strained‐layer semiconductor structures via plastic flow

          Brian Dodson, Jeffrey Y. Tsao (1987)
          Article 0 comments Cited 161 times – based on 0 reviews     Review now
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            Dislocations in strained-layer epitaxy: theory, experiment, and applications

            E.A. Fitzgerald (1991)
            Article 0 comments Cited 130 times – based on 0 reviews     Review now
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              Si/SiGe heterostructures: from material and physics to devices and circuits

              Douglas Paul (2004)
              Article 0 comments Cited 85 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: March 15 2010
                Publication date (Print): March 15 2010
                Volume: 107
                Issue: 6
                Page: 063504
                Article
                DOI: 10.1063/1.3327435
                SO-VID: 28e61d93-cc9f-4538-bca6-db24e4b1425c
                Copyright © © 2010
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