ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
3
views
0
references
Top references
cited by
1
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
1,563
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Transistor Elements for 30nm Physical Gate Lengths and Beyond
Author(s):
B. Doyle
Publication date:
2002
Journal:
Intel Tech. J
Read this article at
ScienceOpen
Bookmark
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Nigerian Journal of Tropical Engineering
Data availability:
ScienceOpen disciplines:
General engineering
,
Engineering
Comments
Comment on this article
Sign in to comment
Similar content
1,563
Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application
Authors:
Tzu-Hsuan Hsu
,
Hang-Ting Lue
,
Chih-Chang Hsieh
…
Formation of 10–30nm SiO2/Si structure with a uniform thickness at ∼120°C by nitric acid oxidation method
Authors:
Asuha
,
Sung-Soon Im
,
Masato Tanaka
…
Characterization of program and erase properties using Fowler–Nordheim tunneling in the 30nm silicon–oxide–nitride–oxide–silicon transistor
Authors:
Hochan Ham
,
Jinhee Heo
,
Chungwoo Kim
…
See all similar
Cited by
1
Modelado unidimensional del sistema óxido-silicio intrínseco-óxido
Authors:
Slavica Malobabic
,
Adelmo Ortiz-Conde
,
Francisco J García Sánchez
…
See all cited by