An experimental 512-bit nonvolatile memory with ferroelectric storage cell

Evans, J.T.; Womack, R.

doi:10.1109/4.5940

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An experimental 512-bit nonvolatile memory with ferroelectric storage cell

Author(s): J.T. Evans , R. Womack

Publication date (Print): Oct. 1988

Journal: IEEE Journal of Solid-State Circuits

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Title: IEEE Journal of Solid-State Circuits

Abbreviated Title: IEEE J. Solid-State Circuits

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189200

Publication date (Print): Oct. 1988

Volume: 23

Issue: 5

Pages: 1171-1175

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DOI: 10.1109/4.5940

SO-VID: ad952c69-5091-4390-b583-9f7f1a1806b6

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An experimental 512-bit nonvolatile memory with ferroelectric storage cell

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