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      Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

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          Abstract

          Mn-doped monoclinic β-(Ga 1−xMn x) 2O 3 thin films were epitaxially grown on α-Al 2O 3 (0001) substrates by alternately depositing Ga 2O 3 and Mn layers using the laser molecular beam epitaxy technique.

          Abstract

          Mn-doped monoclinic β-(Ga 1−xMn x) 2O 3 thin films were epitaxially grown on α-Al 2O 3 (0001) substrates by alternately depositing Ga 2O 3 and Mn layers using the laser molecular beam epitaxy technique. The crystal lattice expands and the energy band gap shrinks with the increase of Mn content for Mn ions incorporated into the Ga site. Ferromagnetism appears even above room temperature when x ≥ 0.11 and can be remarkably enhanced with the continuous increase of Mn indicated by the increased magnetization and coercivity. This study presents a promising candidate for use in spintronic devices that are capable of working at room temperature.

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          Quantum Computation with Quantum Dots

          Daniel Loss, David P. DiVincenzo (1997)
          We propose a new implementation of a universal set of one- and two-qubit gates for quantum computation using the spin states of coupled single-electron quantum dots. Desired operations are effected by the gating of the tunneling barrier between neighboring dots. Several measures of the gate quality are computed within a newly derived spin master equation incorporating decoherence caused by a prototypical magnetic environment. Dot-array experiments which would provide an initial demonstration of the desired non-equilibrium spin dynamics are proposed.
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            Zener model description of ferromagnetism in zinc-blende magnetic semiconductors

            Dietl, Ohno, Matsukura … (2000)
            Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
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              Donor impurity band exchange in dilute ferromagnetic oxides.

              J. Coey, M. Venkatesan, C. Fitzgerald (2005)
              Dilute ferromagnetic oxides having Curie temperatures far in excess of 300 K and exceptionally large ordered moments per transition-metal cation challenge our understanding of magnetism in solids. These materials are high-k dielectrics with degenerate or thermally activated n-type semiconductivity. Conventional super-exchange or double-exchange interactions cannot produce long-range magnetic order at concentrations of magnetic cations of a few percent. We propose that ferromagnetic exchange here, and in dilute ferromagnetic nitrides, is mediated by shallow donor electrons that form bound magnetic polarons, which overlap to create a spin-split impurity band. The Curie temperature in the mean-field approximation varies as (xdelta)(1/2) where x and delta are the concentrations of magnetic cations and donors, respectively. High Curie temperatures arise only when empty minority-spin or majority-spin d states lie at the Fermi level in the impurity band. The magnetic phase diagram includes regions of semiconducting and metallic ferromagnetism, cluster paramagnetism, spin glass and canted antiferromagnetism.
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                Author and article information

                Journal
                Journal ID (publisher-id): JMCCCX
                Title: Journal of Materials Chemistry C
                Abbreviated Title: J. Mater. Chem. C
                Publisher: Royal Society of Chemistry (RSC)
                ISSN (Print): 2050-7526
                ISSN (Electronic): 2050-7534
                Publication date Created: 2015
                Publication date (Electronic): 2015
                Volume: 3
                Issue: 8
                Pages: 1830-1834
                Affiliations
                [1 ]School of Science
                [2 ]Beijing University of Posts and Telecommunications
                [3 ]Beijing 100876
                [4 ]China
                [5 ]State Key Laboratory of Information Photonics and Optical Communications
                [6 ]State Key Laboratory of Functional Materials for Informatics
                [7 ]Shanghai Institute of Microsystem and Information Technology
                [8 ]Chinese Academy of Sciences
                [9 ]Shanghai 200050
                [10 ]Department of Physics
                [11 ]The State University of New York at Potsdam
                [12 ]Potsdam
                [13 ]USA
                [14 ]Beijing National Laboratory for Condensed Matter Physics
                [15 ]Institute of Physics
                [16 ]Chinese Academy of Science
                [17 ]Beijing 100190
                [18 ]Center for Optoelectronics Materials and Devices
                Article
                DOI: 10.1039/C4TC02833C
                SO-VID: a91e57d6-da4e-48a9-868b-77e734f53754
                Copyright © © 2015
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