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      Location of positive charges in SiO2films on Si generated by vuv photons, x rays, and high‐field stressing

      , ,
      Journal of Applied Physics
      AIP Publishing

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          A quasi-static technique for MOS C-V and surface state measurements

          M. Kuhn (1970)
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            Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

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              Effects of ionizing radiation on oxidized silicon surfaces and planar devices

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                March 1977
                March 1977
                : 48
                : 3
                : 898-906
                Article
                10.1063/1.323705
                a5f03a36-e4cd-4307-a275-300444b0f27d
                © 1977
                History

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