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      Improved remnant polarization of Zr-doped HfO 2 ferroelectric film by CF 4/O 2 plasma passivation

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          Abstract

          In this work, the impact of fluorine (CF 4) and oxygen (O 2) plasma passivation on HfZrO x (HZO) based ferroelectric capacitor was investigated. By the fluorine passivation, the surface trap density and oxygen vacancies in the HZO-based Metal–ferroelectric–insulator–semiconductor (MFIS) capacitors were suppressed, resulting in the increased pristine remnant polarization (2P r). The pristine value (2P r) of baseline samples annealed at 500 °C and 600 °C were 11.4 µC/cm 2 and 24.4 µC/cm 2, respectively. However, with the F–passivation, the 2P r values were increased to 30.8 µC/cm 2 and 48.2 µC/cm 2 for 500 °C and 600 °C, respectively. The amount of surface defects and oxygen vacancies are quantitatively confirmed by the conductance method and XPS analysis. However, due to the incorporation of fluorine atoms into the ferroelectric–insulator films, undesirable degradation on endurance characteristics were observed.

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          Ferroelectricity in hafnium oxide thin films

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            The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

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              Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

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                Author and article information

                Contributors
                cshin@korea.ac.kr
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                6 October 2022
                6 October 2022
                2022
                : 12
                : 16750
                Affiliations
                [1 ]GRID grid.264381.a, ISNI 0000 0001 2181 989X, Department of Electrical and Computer Engineering, , Sungkyunkwan University, ; Suwon, 16419 South Korea
                [2 ]GRID grid.214458.e, ISNI 0000000086837370, Department of Materials Science and Engineering, , University of Michigan, ; Ann Arbor, MI 48109 USA
                [3 ]GRID grid.222754.4, ISNI 0000 0001 0840 2678, School of Electrical Engineering, , Korea University, ; Seoul, 02841 South Korea
                Article
                21263
                10.1038/s41598-022-21263-8
                9537174
                36202954
                94544517-5571-443d-9f23-462a3b89ab1b
                © The Author(s) 2022

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 5 August 2022
                : 26 September 2022
                Funding
                Funded by: FundRef http://dx.doi.org/10.13039/501100003725, National Research Foundation of Korea;
                Award ID: 2020R1A2C1009063
                Categories
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                Custom metadata
                © The Author(s) 2022

                Uncategorized
                engineering,nanoscience and technology
                Uncategorized
                engineering, nanoscience and technology

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