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      Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

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          Ferroelectricity in hafnium oxide thin films

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            Ferroelectricity in Simple Binary ZrO2 and HfO2.

            The transition metal oxides ZrO(2) and HfO(2) as well as their solid solution are widely researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal structure and therewith linear dielectric characteristics. For this reason, those oxides, even though successfully introduced into microelectronics, were never considered to be more than simple dielectrics possessing limited functionality. Here we report the discovery of a field-driven ferroelectric phase transition in pure, sub 10 nm ZrO(2) thin films and a composition- and temperature-dependent transition to a stable ferroelectric phase in the HfO(2)-ZrO(2) mixed oxide. These unusual findings are attributed to a size-driven tetragonal to orthorhombic phase transition that in thin films, similar to the anticipated tetragonal to monoclinic transition, is lowered to room temperature. A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
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              Characterizing interactions in fine magnetic particle systems using first order reversal curves

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                Author and article information

                Journal
                Advanced Functional Materials
                Adv. Funct. Mater.
                Wiley-Blackwell
                1616301X
                July 2016
                July 2016
                : 26
                : 25
                : 4601-4612
                Article
                10.1002/adfm.201600590
                114378ea-3e84-4bc8-aab0-19407f3d3f72
                © 2016

                http://doi.wiley.com/10.1002/tdm_license_1

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