Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence

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Journal

Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0018-9383

ISSN (Electronic): 1557-9646

Publication date Created: January 2013

Publication date (Print): January 2013

Volume: 60

Issue: 1

Pages: 153-158

Article

DOI: 10.1109/TED.2012.2230175

SO-VID: 8a64a328-8eed-44e1-8b7c-238fdb325edf

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Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}\(pMOSFETs Using Corrugated Substrates for Improved \)I_{\rm ON}$ and Reduced Layout-Width Dependence

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