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      Material and electrical characterization of carbon-doped Ta[sub 2]O[sub 5] films for embedded dynamic random access memory applications

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          Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

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            Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate

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              UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs

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                Author and article information

                Journal
                JAPIAU
                Journal of Applied Physics
                J. Appl. Phys.
                AIP Publishing
                00218979
                2002
                2002
                : 91
                : 1
                : 308
                Article
                10.1063/1.1418420
                88d7ec08-05b0-4dcc-85bd-09a2c5b3b710
                © 2002
                History

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