2D Materials for Photothermoelectric Detectors: Mechanisms, Materials, and Devices

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Abstract

2D materials, with outstanding optical, thermal, and electric properties, are emerging as promising candidates for fabricating high‐performance photodetectors. Recently, impressive progresses have been made in this area and some challenges are remaining to improve the properties of photodetectors. As one important part in the mainstream photodetection mechanisms, photothermoelectric (PTE) effect is showing unique priorities in fabricating advanced photodetectors, especially broadband detection operating in the mid‐infrared and terahertz spectral regime. Here, recent progress on PTE photodetectors based on layered 2D materials is reviewed. The physical mechanism of PTE effect is first discussed and then the optical and thermoelectric properties of various 2D materials are analyzed. Furthermore, strategies to improve the photodetection performance of PTE detectors are summarized in two major categories including enhanced photothermal conversion and thermoelectric conversion processes. Finally, the challenges and prospects for future research in 2D thermoelectric materials and PTE detectors are also provided.

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Electric Field Effect in Atomically Thin Carbon Films

K. S. Novoselov, A. K. Geim, S. Morozov … (2004)

We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.

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Black phosphorus field-effect transistors

Likai Li, Yijun Yu, Guo Jun Ye … (2014)

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.