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      Creation and annihilation of mobile fractional solitons in atomic chains

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          Abstract

          Localized modes in one-dimensional (1D) topological systems, such as Majonara modes in topological superconductors, are promising candidates for robust information processing. While theory predicts mobile integer and fractional topological solitons in 1D topological insulators, experiments so far have unveiled immobile, integer solitons only. Here we observe fractionalized phase defects moving along trimer silicon atomic chains formed along step edges of a vicinal silicon surface. By means of tunnelling microscopy, we identify local defects with phase shifts of 2π/3 and 4π/3 with their electronic states within the band gap and with their motions activated above 100 K. Theoretical calculations reveal the topological soliton origin of the phase defects with fractional charges of ±2e/3 and ±4e/3. Additionally, we create and annihilate individual solitons at desired locations by current pulses from the probe tip. Mobile and manipulable topological solitons may serve as robust, topologically protected information carriers in future information technology.

          Abstract

          The movement of fractionalized phase defects, that can be considered as fractional solitons promising for future information technology, is observed in atomic chains formed along step edges of silicon surfaces, solitons may serve as robust, topologically protected information carriers in future information technology

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Colloquium: Topological insulators

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              Restoring the density-gradient expansion for exchange in solids and surfaces.

              Popular modern generalized gradient approximations are biased toward the description of free-atom energies. Restoration of the first-principles gradient expansion for exchange over a wide range of density gradients eliminates this bias. We introduce a revised Perdew-Burke-Ernzerhof generalized gradient approximation that improves equilibrium properties of densely packed solids and their surfaces.
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                Author and article information

                Contributors
                yeom@postech.ac.kr
                Journal
                Nat Nanotechnol
                Nat Nanotechnol
                Nature Nanotechnology
                Nature Publishing Group UK (London )
                1748-3387
                1748-3395
                22 December 2021
                22 December 2021
                2022
                : 17
                : 3
                : 244-249
                Affiliations
                [1 ]GRID grid.410720.0, ISNI 0000 0004 1784 4496, Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), ; Pohang, Korea
                [2 ]GRID grid.49100.3c, ISNI 0000 0001 0742 4007, Department of Physics, , Pohang University of Science and Technology, ; Pohang, Korea
                [3 ]GRID grid.424881.3, ISNI 0000 0004 0634 148X, Institute of Physics of the Czech Academy of Sciences, ; Prague, Czech Republic
                Author information
                http://orcid.org/0000-0002-9432-0157
                http://orcid.org/0000-0002-5645-8542
                http://orcid.org/0000-0002-8538-8993
                Article
                1042
                10.1038/s41565-021-01042-8
                8930762
                34934195
                588102d1-8af3-49a8-b03b-c9a19448c454
                © The Author(s) 2022

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 21 July 2021
                : 2 November 2021
                Funding
                Funded by: FundRef https://doi.org/10.13039/501100010446, Institute for Basic Science (IBS);
                Award ID: IBS_R014_D1
                Award Recipient :
                Categories
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                © The Author(s), under exclusive licence to Springer Nature Limited 2022

                Nanotechnology
                topological defects,surfaces, interfaces and thin films
                Nanotechnology
                topological defects, surfaces, interfaces and thin films

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