Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors

Abstract

Photodetectors built from conventional bulk materials such as silicon, III–V or II–VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in emerging photodetectors based on perovskite materials driven by the growing demands for uncooled, low‐cost, lightweight, and even flexible photodetection technology. Though perovskite has good electrical and optical properties, perovskite‐based photodetectors always suffer from nonideal quantum efficiency and high‐power consumption. Joint manipulation of electrons and photons in perovskite photodetectors is a promising strategy to improve detection efficiency. In this review, electrical and optical characteristics of typical types of perovskite photodetectors are first summarized. Electrical manipulations of electrons in perovskite photodetectors are discussed. Then, artificial photonic nanostructures for photon manipulations are detailed to improve light absorption efficiency. By reviewing the manipulation of electrons and photons in perovskite photodetectors, this review aims to provide strategies to achieve high‐performance photodetectors.

Abstract

This review summarizes the state‐of‐the‐art electrical and optical characteristics of typical perovskite photodetectors. The electrical manipulations with advanced device structures and optical manipulations with artificial photonic nanostructures are detailed to improve light absorption, photoelectric conversion, and carrier transmission performance in perovskite photodetectors. This review aims to provide strategies to achieve high‐performance photodetectors.