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      Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

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          Abstract

          Neuromorphic computing using nonvolatile memories is expected to tackle the memory wall and energy efficiency bottleneck in the von Neumann system and to mitigate the stagnation of Moore’s law. However, an ideal artificial neuron possessing bio-inspired behaviors as exemplified by the requisite leaky-integrate-fire and self-reset (LIFT) functionalities within a single device is still lacking. Here, we report a new type of spiking neuron with LIFT characteristics by manipulating the magnetic domain wall motion in a synthetic antiferromagnetic (SAF) heterostructure. We validate the mechanism of Joule heating modulated competition between the Ruderman–Kittel–Kasuya–Yosida interaction and the built-in field in the SAF device, enabling it with a firing rate up to 17 MHz and energy consumption of 486 fJ/spike. A spiking neuron circuit is implemented with a latency of 170 ps and power consumption of 90.99 μW. Moreover, the winner-takes-all is executed with a current ratio >10 4 between activated and inhibited neurons. We further establish a two-layer spiking neural network based on the developed spintronic LIFT neurons. The architecture achieves 88.5% accuracy on the handwritten digit database benchmark. Our studies corroborate the circuit compatibility of the spintronic neurons and their great potential in the field of intelligent devices and neuromorphic computing.

          Abstract

          Designing bio-inspired artificial neurons within a single device is challenging. Here, the authors demonstrate a spintronic neuron with leaky-integrate-fire and self-reset characteristics and corroborate a new trajectory of all-spin neuromorphic computing hardware holistic implementation.

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                Author and article information

                Contributors
                gzxing@ime.ac.cn
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                24 February 2023
                24 February 2023
                2023
                : 14
                : 1068
                Affiliations
                [1 ]GRID grid.9227.e, ISNI 0000000119573309, Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, , Chinese Academy of Sciences, ; 100029 Beijing, China
                [2 ]GRID grid.410726.6, ISNI 0000 0004 1797 8419, University of Chinese Academy of Sciences, ; 100049 Beijing, China
                [3 ]GRID grid.47840.3f, ISNI 0000 0001 2181 7878, Department of Electrical Engineering and Computer Sciences, , University of California, ; Berkeley, CA 94720 USA
                [4 ]GRID grid.9227.e, ISNI 0000000119573309, Institute of Metal Research, , Chinese Academy of Sciences, ; Shenyang, 110016 China
                [5 ]GRID grid.59053.3a, ISNI 0000000121679639, School of Microelectronics, , University of Science and Technology of China, ; Hefei, 230026 Anhui China
                [6 ]Jiufengshan Laboratory, Wuhan, 430206 Hubei China
                [7 ]GRID grid.12527.33, ISNI 0000 0001 0662 3178, Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, , Tsinghua University, ; 100084 Beijing, China
                [8 ]GRID grid.9227.e, ISNI 0000000119573309, State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, , Chinese Academy of Sciences, ; 100083 Beijing, China
                [9 ]GRID grid.16890.36, ISNI 0000 0004 1764 6123, Department of Applied Physics, , The Hong Kong Polytechnic University, ; Kowloon, Hong Kong, China
                Author information
                http://orcid.org/0000-0001-6147-5710
                http://orcid.org/0000-0002-4997-8494
                http://orcid.org/0000-0001-7662-2701
                http://orcid.org/0000-0002-0598-266X
                http://orcid.org/0000-0001-9989-3977
                http://orcid.org/0000-0002-7142-8552
                http://orcid.org/0000-0003-2784-9859
                http://orcid.org/0000-0002-4372-9390
                http://orcid.org/0000-0002-7651-9031
                http://orcid.org/0000-0001-8750-3847
                http://orcid.org/0000-0003-0845-4827
                http://orcid.org/0000-0002-0618-1960
                Article
                36728
                10.1038/s41467-023-36728-1
                9957988
                36828856
                40f68952-a141-4cc8-813e-4b8e9231227b
                © The Author(s) 2023

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 28 June 2022
                : 14 February 2023
                Funding
                Funded by: This work was supported by the National Key R&D Program under Grant No. of 2021YFB3601300 and 2019YFB2205100, the National Natural Science Foundation of China under Grant No. of 62074164, 61888102, 61821091, 61904039, 52225106, 12241404 and 12274405, the Director Fund of Institute of Microelectronics and the Dedicated Fund of Chinese Academy of Sciences (E0SR023002, E0ZR223010, E0YR063004) and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No. of XDB44010100.
                Categories
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                © The Author(s) 2023

                Uncategorized
                electrical and electronic engineering,electronic and spintronic devices
                Uncategorized
                electrical and electronic engineering, electronic and spintronic devices

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