Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

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Abstract

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiN _x:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiN _x:H layer boosted the open circuit voltage ( V _oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiN _x:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PEDOT:PSS, rear-SiN _x:H, front PEDOT:PSS/rear-SiN _x:H, etc. are thoroughly investigated, in consideration of the process-related variations.

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Author and article information

Contributors

Yong Xiang: +86-28-61831556 , xiang@uestc.edu.cn

Jichun Ye: +86-574-87608980 , jichun.ye@nimte.ac.cn

Journal

Journal ID (nlm-ta): Nanoscale Res Lett

Journal ID (iso-abbrev): Nanoscale Res Lett

Title: Nanoscale Research Letters

Publisher: Springer US (New York )

ISSN (Print): 1931-7573

ISSN (Electronic): 1556-276X

Publication date (Electronic): 28 June 2016

Publication date PMC-release: 28 June 2016

Publication date Collection: 2016

Volume: 11

Electronic Location Identifier: 310

Affiliations

[ ]School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 People’s Republic of China

[ ]Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201 People’s Republic of China

Article

Publisher ID: 1505

DOI: 10.1186/s11671-016-1505-7

PMC ID: 4925382

PubMed ID: 27352263

SO-VID: 392845b9-30e0-4717-9e3a-79f60720a767

License:

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

History

Date received : 24 February 2016

Date accepted : 30 May 2016

Funding

Funded by: FundRef http://dx.doi.org/10.13039/501100001809, National Natural Science Foundation of China;

Award ID: Grant No. 61404144

Award Recipient : Pingqi Gao

Custom metadata

ScienceOpen disciplines: Nanomaterials

Keywords: si/pedot:pss,hybrid solar cells,sinx:h passivation,photolithography

Data availability:

ScienceOpen disciplines: Nanomaterials

Keywords: si/pedot:pss, hybrid solar cells, sinx:h passivation, photolithography

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