Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Abstract

The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/Al _x Ga _{1-
x}As quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit coupling plus asymmetric potential gradients. We also exploit the temperature dependence of spin-splitting energy. Both the anisotropy of spin splitting and the in-plane effective g-factor decrease with increasing temperature.

PACS: 78.47.jm, 71.70.Ej, 75.75.+a, 72.25.Fe,

Related collections

Most cited references 10

Record: found
Abstract: found
Article: found

Is Open Access

Spintronics: Fundamentals and applications

Jaroslav Fabian, S Sarma, Igor Zutić (2004)

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

0 comments Cited 957 times – based on 0 reviews

Preprint

     Review now

Bookmark

Record: found
Abstract: found
Article: found

Is Open Access

Semiconductor Spintronics

J. Fabian, A. Matos-Abiague, C. Ertler … (2007)

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.

0 comments Cited 82 times – based on 0 reviews

Preprint

     Review now

Bookmark

Record: found
Abstract: not found
Article: not found

Spin Quantum Beats of 2D Excitons

X. Marie, T. Amand, P. Le Jeune … (1997)

0 comments Cited 47 times – based on 0 reviews      Review now

Bookmark

All references

Author and article information

Journal

Journal ID (nlm-ta): Nanoscale Res Lett

Journal ID (iso-abbrev): Nanoscale Res Lett

Title: Nanoscale Research Letters

Publisher: Springer

ISSN (Print): 1931-7573

ISSN (Electronic): 1556-276X

Publication date Collection: 2011

Publication date (Electronic): 2 September 2011

Volume: 6

Issue: 1

Page: 520

Affiliations

[1 ]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China

[2 ]College of Physics, Jilin University, Changchun, 130021, China

[3 ]State Key for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

Article

Publisher ID: 1556-276X-6-520

DOI: 10.1186/1556-276X-6-520

PMC ID: 3271362

PubMed ID: 21888636

SO-VID: 34e75d7d-2d1d-4c4c-b55a-edae13d48839

License:

This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

History

Date received : 2 June 2011

Date accepted : 2 September 2011

Comments

Comment on this article

scite_

Smart Citations

Citing PublicationsSupportingMentioningContrasting

View Citations

See how this article has been cited at scite.ai

scite shows how a scientific paper has been cited by providing the context of the citation, a classification describing whether it supports, mentions, or contrasts the cited claim, and a label indicating in which section the citation was made.