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      Damage buildup in GaN under ion bombardment

      , , , ,
      Physical Review B
      American Physical Society (APS)

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          A Monte Carlo computer program for the transport of energetic ions in amorphous targets

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            GaN: Processing, defects, and devices

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              III–nitrides: Growth, characterization, and properties

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                1095-3795
                September 2000
                September 15 2000
                : 62
                : 11
                : 7510-7522
                Article
                10.1103/PhysRevB.62.7510
                26c4af47-c2ed-4ba1-9cda-220cff628e20
                © 2000

                http://link.aps.org/licenses/aps-default-license

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