Effect of ion species on the accumulation of ion-beam damage in$ \mathrm{GaN}$

Titov, A. I.; Williams, J S; Jagadish, C; Zou, J; Li, G.; Kucheyev, S. O.

doi:10.1103/PhysRevB.64.035202

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Effect of ion species on the accumulation of ion-beam damage in$\mathrm{GaN}$

Author(s): S. O. Kucheyev , J. S. Williams , C. Jagadish , J. Zou , G. Li , A. I. Titov

Publication date (Electronic): June 20 2001

Journal: Physical Review B

Publisher: American Physical Society (APS)

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Most cited references 27

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A Monte Carlo computer program for the transport of energetic ions in amorphous targets

J.P. Biersack, L.G. Haggmark (1980)

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GaN: Processing, defects, and devices

S Pearton, F Ren, R. J. Shul … (1999)

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III–nitrides: Growth, characterization, and properties

S Jain, J. Narayan, R. Van Overstraeten … (2000)

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Journal ID (publisher-id): PRBMDO

Title: Physical Review B

Abbreviated Title: Phys. Rev. B

Publisher: American Physical Society (APS)

ISSN (Print): 0163-1829

ISSN (Electronic): 1095-3795

Publication date Created: June 2001

Publication date (Electronic): June 20 2001

Volume: 64

Issue: 3

Article

DOI: 10.1103/PhysRevB.64.035202

SO-VID: d3ffc7b5-5673-4f53-9d24-af542845bc00

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http://link.aps.org/licenses/aps-default-license

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Effect of ion species on the accumulation of ion-beam damage in\(\mathrm{GaN}\)

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Functional role of amyloid

Most cited references 27

A Monte Carlo computer program for the transport of energetic ions in amorphous targets

GaN: Processing, defects, and devices

III–nitrides: Growth, characterization, and properties

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