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      Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

      , , , , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Thermodynamic stability of binary oxides in contact with silicon

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            Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

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              Thermodynamic considerations in refractory metal‐silicon‐oxygen systems

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                December 20 1999
                December 20 1999
                : 75
                : 25
                : 4001-4003
                Article
                10.1063/1.125519
                1ea8808d-8d68-40a6-9f78-da397e92a17f
                © 1999
                History

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