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      Transport Study of GaAs/AlGaAs Heterostructure- andn-Type GaAs-Devices in the `Anti Hall Bar within a Hall Bar' Configuration

      Author(s): 1
      Publication date Created:
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      Journal: Journal of the Physical Society of Japan
      Publisher: Japan Society of Applied Physics

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          Quantized Hall conductance as a topological invariant

          Qian Niu, D. Thouless, Yong-Shi Wu (1985)
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            Quenching of the Hall Effect in a One-Dimensional Wire

            J. P. Harbison, S Allen, M Roukes … (1987)
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              Edge states, transmission matrices, and the Hall resistance

              A. MacDonald, J. Kučera, P. Středa (1987)
              Article 0 comments Cited 94 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of the Physical Society of Japan
                Abbreviated Title: J. Phys. Soc. Jpn.
                Publisher: Japan Society of Applied Physics
                ISSN (Print): 0031-9015
                ISSN (Electronic): 1347-4073
                Publication date Created: June 15 1996
                Publication date (Print): June 15 1996
                Volume: 65
                Issue: 6
                Pages: 1751-1759
                Affiliations
                [1 ]Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D70569 Stuttgart, Germany
                Article
                DOI: 10.1143/JPSJ.65.1751
                SO-VID: 1c1f09e4-ac1e-46b9-b004-e189796aacc7
                Copyright © © 1996
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