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      Role of interfacial oxide-related defects in the red-light emission in porous silicon

      Author(s): ,
      Publication date (Print):
      Journal: Physical Review B
      Publisher: American Physical Society (APS)

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          Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

          L. Canham (1990)
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            Visible light emission due to quantum size effects in highly porous crystalline silicon

            A G Cullis, L. Canham (1991)
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              The origin of visible luminescencefrom “porous silicon”: A new interpretation

              J. Weber, M Stutzmann, H.D. Fuchs … (1992)
              Article 0 comments Cited 222 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRBMDO
                Title: Physical Review B
                Abbreviated Title: Phys. Rev. B
                Publisher: American Physical Society (APS)
                ISSN (Print): 0163-1829
                ISSN (Electronic): 1095-3795
                Publication date Created: January 1994
                Publication date (Print): January 15 1994
                Volume: 49
                Issue: 3
                Pages: 2238-2241
                Article
                DOI: 10.1103/PhysRevB.49.2238
                SO-VID: 143f4cd1-725e-4615-8aa0-dfc278f03b32
                Copyright © © 1994
                License:

                http://link.aps.org/licenses/aps-default-license

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