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      Kinetics of 90° domain wall motions and high frequency mesoscopic dielectric response in strained ferroelectrics: A phase-field simulation

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          Abstract

          The dielectric and ferroelectric behaviors of a ferroelectric are substantially determined by its domain structure and domain wall dynamics at mesoscopic level. A relationship between the domain walls and high frequency mesoscopic dielectric response is highly appreciated for high frequency applications of ferroelectrics. In this work we investigate the low electric field driven motion of 90°-domain walls and the frequency-domain spectrum of dielectric permittivity in normally strained ferroelectric lattice using the phase-field simulations. It is revealed that, the high-frequency dielectric permittivity is spatially inhomogeneous and reaches the highest value on the 90°-domain walls. A tensile strain favors the parallel domains but suppresses the kinetics of the 90° domain wall motion driven by electric field, while the compressive strain results in the opposite behaviors. The physics underlying the wall motions and thus the dielectric response is associated with the long-range elastic energy. The major contribution to the dielectric response is from the polarization fluctuations on the 90°-domain walls, which are more mobile than those inside the domains. The relevance of the simulated results wth recent experiments is discussed.

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          Domain dynamics during ferroelectric switching.

          The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO(3)) on a ferromagnetic electrode (La(0.7)Sr(0.3)MnO(3)). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.
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            Prediction of a giant dielectric anomaly in ultrathin polydomain ferroelectric epitaxial films.

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              Author and article information

              Journal
              Sci Rep
              Sci Rep
              Scientific Reports
              Nature Publishing Group
              2045-2322
              21 May 2014
              2014
              : 4
              : 5007
              Affiliations
              [1 ]Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, China
              [2 ]Department of Mechanical Engineering, University of Washington , Seattle, WA 98195, USA
              Author notes
              Article
              srep05007
              10.1038/srep05007
              4028899
              038e1980-0b2c-4548-bf63-8c2624e36ac1
              Copyright © 2014, Macmillan Publishers Limited. All rights reserved

              This work is licensed under a Creative Commons Attribution 3.0 Unported License. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/

              History
              : 26 March 2014
              : 01 May 2014
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