$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu

doi:10.1109/LED.2013.2244057

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$\hbox{Ga}_{2} \hbox{O}_{3}$Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

Author(s): Kohei Sasaki , Masataka Higashiwaki , Akito Kuramata , Takekazu Masui , Shigenobu Yamakoshi

Publication date (Print): April 2013

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Kohei Sasaki, Takekazu Masui, Shigenobu Yamakoshi … (2012)

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Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

H. H. Tippins (1965)

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Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

Hideo Hosono, Ryuta Waseda, Naoyuki Ueda … (1997)

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Author and article information

Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

ISSN (Electronic): 1558-0563

Publication date Created: April 2013

Publication date (Print): April 2013

Volume: 34

Issue: 4

Pages: 493-495

Article

DOI: 10.1109/LED.2013.2244057

SO-VID: 016315b4-b67a-43f1-a624-80872fc08b08

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$\hbox{Ga}_{2} \hbox{O}_{3}\(Schottky Barrier Diodes Fabricated by Using Single-Crystal \)\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

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Most cited references 9

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

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