Monolithically combining silicon nitride ( ) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of . With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans 400 nm to 11 µm, with a crucial gap in the red-wavelength regime of 630–750 nm. Here, we demonstrate red QW and far-red InP QD lasers monolithically grown on CMOS-compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of and with emission at 680–730 nm was achieved for QW and QD lasers on Si, respectively. This work represents a step toward the integration of visible red lasers on Si, allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays.