Giant electrode effect on tunneling magnetoresistance and electroresistance in van der Waals intrinsic multiferroic tunnel junctions

Abstract

Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of materials, i.e., vdW ferromagnetic and ferroelectric materials, forming a multiferroic system. This undoubtedly introduces additional interfaces, increasing the complexity of experimental preparation. Herein, we engineer vdW intrinsic MFTJs utilizing bilayer VS\(_2\). By employing the nonequilibrium Green's function combined with density functional theory, we systematically investigate the influence of three types of electrodes (including non-vdW pure metal Ag/Au, vdW metallic 1T-MoS\(_2\)/2H-PtTe\(_2\), and vdW ferromagnetic metallic Fe\(_3\)GaTe\(_2\)/Fe\(_3\)GeTe\(_2\)) on the electronic transport properties of VS\(_2\)-based intrinsic MFTJs. We demonstrate that these MFTJs manifest a giant electrode-dependent electronic transport characteristic effect. Comprehensively comparing these electrode pairs, the Fe\(_3\)GaTe\(_2\)/Fe\(_3\)GeTe\(_2\) electrode combination exhibits optimal transport properties, the maximum TMR (TER) can reach 10949\% (69\%) and the minimum resistance-area product (RA) is 0.45 \(\Omega\)$\mu\(m\)^{2}\(, as well as the perfect spin filtering and negative differential resistance effects. More intriguingly, TMR (TER) can be further enhanced to 34000\% (380\%) by applying an external bias voltage (0.1 V), while RA can be reduced to 0.16 \)\Omega\(\)\mu\(m\)^{2}$ under the influence of biaxial stress (-3\%). Our proposed concept of designing vdW-MFTJs using intrinsic multiferroic materials points towards new avenues in experimental exploration.