Novel Exfoliation of High-Quality 2H-MoS 2  Nanoflakes for Solution-Processed Photodetector

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Abstract

Highly dispersive molybdenum disulfide nanoflakes (MoS ₂ NFs), without any phase transition during the exfoliation process, are desirable for full utilization of their semiconductor properties in practical applications. Here, we demonstrate an innovate approach for fabricating MoS ₂ NFs by using hydrazine-assisted ball milling via the synergetic effect of chemical intercalation and mechanical exfoliation. The NFs obtained have a lateral size of 600–800 nm, a thickness less than 3 nm, and high crystallinity in the 2H semiconducting phase. They form a stable dispersion in various solvents, which will be helpful for many applications, due to the oxygen functional group. To investigate production of a two-dimensional (2D) photodetector, 2D semiconducting MoS ₂, MoS ₂–p-Si vertical devices were fabricated, and their optical properties were characterized. The photodiode exhibited consistent responses with excellent photo-switching characteristics with wavelengths of 850, 530, and 400 nm.

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High performance multilayer MoS2 transistors with scandium contacts.

Saptarshi Das, Hong-Yan Chen, Ashish Penumatcha … (2013)

While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS(2) layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS(2) flakes that are covered by a 15 nm Al(2)O(3) film, high effective mobilities of 700 cm(2)/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a misconception that we also elucidate in the present article.

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Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets.

Hai Li, Jumiati Wu, Zongyou Yin … (2014)

Although great progress has been achieved in the study of graphene, the small current ON/OFF ratio in graphene-based field-effect transistors (FETs) limits its application in the fields of conventional transistors or logic circuits for low-power electronic switching. Recently, layered transition metal dichalcogenide (TMD) materials, especially MoS2, have attracted increasing attention. In contrast to its bulk material with an indirect band gap, a single-layer (1L) MoS2 nanosheet is a semiconductor with a direct band gap of ~1.8 eV, which makes it a promising candidate for optoelectronic applications due to the enhancement of photoluminescence and high current ON/OFF ratio. Compared with TMD nanosheets prepared by chemical vapor deposition and liquid exfoliation, mechanically exfoliated ones possess pristine, clean, and high-quality structures, which are suitable for the fundamental study and potential applications based on their intrinsic thickness-dependent properties. In this Account, we summarize our recent research on the preparation, characterization, and applications of 1L and multilayer MoS2 and WSe2 nanosheets produced by mechanical exfoliation. During the preparation of nanosheets, we proposed a simple optical identification method to distinguish 1L and multilayer MoS2 and WSe2 nanosheets on a Si substrate coated with 90 and 300 nm SiO2. In addition, we used Raman spectroscopy to characterize mechanically exfoliated 1L and multilayer WSe2 nanosheets. For the first time, a new Raman peak at 308 cm(-1) was observed in the spectra of WSe2 nanosheets except for the 1L WSe2 nanosheet. Importantly, we found that the 1L WSe2 nanosheet is very sensitive to the laser power during characterization. The high power laser-induced local oxidation of WSe2 nanosheets and single crystals was monitored by Raman spectroscopy and atomic force microscopy (AFM). Hexagonal and monoclinic structured WO3 thin films were obtained from the local oxidization of single- to triple-layer (1L-3L) and quadruple- to quintuple-layer (4L-5L) WSe2 nanosheets, respectively. Then, we present Raman characterization of shear and breathing modes of 1L and multilayer MoS2 and WSe2 nanosheets in the low frequency range (<50 cm(-1)), which can be used to accurately identify the layer number of nanosheets. Magnetic force microscopy was used to characterize 1L and multilayer MoS2 nanosheets, and thickness-dependent magnetic response was found. In the last part, we briefly introduce the applications of 1L and multilayer MoS2 nanosheets in the fields of gas sensors and phototransistors.

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A library of atomically thin metal chalcogenides

Qundong Fu, Yu Chen, Juan Xia … (2018)

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Journal

Journal ID (nlm-ta): Nanomaterials (Basel)

Journal ID (iso-abbrev): Nanomaterials (Basel)

Journal ID (publisher-id): nanomaterials

Title: Nanomaterials

Publisher: MDPI

ISSN (Electronic): 2079-4991

Publication date (Electronic): 29 May 2020

Publication date Collection: June 2020

Volume: 10

Issue: 6

Electronic Location Identifier: 1045

Affiliations

[1 ]Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju 28644, Korea; kimsg@ 123456chungbuk.ac.kr (S.K.); wjpark80@ 123456gmail.com (W.P.); rlaehgns235@ 123456gmail.com (D.K.); wldusk0609@ 123456chungbuk.ac.kr (J.K.); jaesounglee@ 123456cbnu.ac.kr (J.L.); hyjang0581@ 123456gmail.com (H.Y.J.)

[2 ]Division of Advanced Materials Engineering, Kongju National University, Kongju, Chungnam 330-717, Korea

Author notes

[* ]Correspondence: shsong805@ 123456kongju.ac.kr (S.H.S.); bycho@ 123456chungbuk.ac.kr (B.C.); dongjulee@ 123456chungbuk.ac.kr (D.L.)

[†]

These authors contributed equally to this work.

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Dongju Lee https://orcid.org/0000-0002-5072-7457

Article

Publisher ID: nanomaterials-10-01045

DOI: 10.3390/nano10061045

PMC ID: 7352925

PubMed ID: 32486096

SO-VID: ef0358ae-4388-48ce-adac-1f661228a376

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Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

Novel Exfoliation of High-Quality 2H-MoS ₂ Nanoflakes for Solution-Processed Photodetector

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Abstract

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Photoluminescent Nanomaterials

Most cited references 25

High performance multilayer MoS2 transistors with scandium contacts.

Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets.

A library of atomically thin metal chalcogenides

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