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High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Denis A. Bandurin ,
Anastasia V. Tyurnina ,
Geliang L. Yu ,
Artem Mishchenko ,
Viktor Zólyomi ,
Sergey V. Morozov ,
Roshan Krishna Kumar ,
Roman V. Gorbachev ,
Zakhar R. Kudrynskyi ,
Sergio Pezzini ,
Zakhar D. Kovalyuk ,
Uli Zeitler ,
Konstantin S. Novoselov ,
Amalia Patanè ,
Laurence Eaves ,
Irina V. Grigorieva ,
Vladimir I. Fal'ko ,
Andre K. Geim ,
Yang Cao
November 21 2016
November 21 2016
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Abstract
Encapsulated few-layer InSe exhibits a remarkably high electronic quality, which is promising for the development of ultrathin-body high-mobility nanoelectronics.