Incorporation of implanted In and Sb in silicon during amorphous layer regrowth

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Reordering of amorphous layers of Si implanted with31P,75As, and11B ions

L Csepregi, E. F. Kennedy, T J Gallagher … (1977)

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Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers

E. F. Kennedy, L Csepregi, J. Mayer … (1977)

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Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si

L Csepregi, J.W. Mayer, T.W. Sigmon (1975)

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Author and article information

Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: January 1979

Publication date (Print): January 1979

Volume: 50

Issue: 1

Pages: 173-182

Article

DOI: 10.1063/1.325686

SO-VID: e8553b99-f12e-4459-965d-efd315187635

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