High-density chain ferroelectric random access memory (chain FRAM)

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Most cited references 12

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A 16 kb ferroelectric nonvolatile memory with a bit parallel architecture

R. Womack, D. Tolsch (2025)

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Record: found
Abstract: not found
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A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns

C. Paz de Araujo, L. McMillan, G. Kano … (2025)

0 comments Cited 12 times – based on 0 reviews

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A 60-ns 1-Mb nonvolatile ferroelectric memory with a nondriven cell plate line write/read scheme

S. Kobayashi, T. Kunio, H Koike … (1996)

0 comments Cited 8 times – based on 0 reviews      Review now

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Author and article information

Journal

Title: IEEE Journal of Solid-State Circuits

Abbreviated Title: IEEE J. Solid-State Circuits

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189200

Publication date (Print): May 1998

Volume: 33

Issue: 5

Pages: 787-792

Article

DOI: 10.1109/4.668994

SO-VID: e6bb644b-a978-4f31-8366-6ee7dcc579e6

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