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      Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

      , , , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Growth morphology and the equilibrium shape: The role of "surfactants" in Ge/Si island formation.

          (1993)
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            GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm

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              New infrared detector on a silicon chip

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                June 15 1998
                June 15 1998
                : 72
                : 24
                : 3175-3177
                Article
                10.1063/1.121584
                e62d990d-45ae-47e5-b213-40e6691a533d
                © 1998
                History

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