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      Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy

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      Physical Review B
      American Physical Society (APS)

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          Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering

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            Investigation of the density of localized states in a-Si using the field effect technique

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              Luminescence studies of plasma-deposited hydrogenated silicon

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                April 1982
                April 1982
                : 25
                : 8
                : 5559-5562
                Article
                10.1103/PhysRevB.25.5559
                e4039f6e-2c75-4686-b4eb-285227667aac
                © 1982

                http://link.aps.org/licenses/aps-default-license

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