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      Photo-electrical and transport properties of hydrothermal ZnO

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          Fundamentals of zinc oxide as a semiconductor

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            Optically pumped lasing of ZnO at room temperature

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              Luminescence properties of defects in GaN

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                April 07 2016
                April 07 2016
                : 119
                : 13
                : 135705
                Affiliations
                [1 ]Institute of Technical Physics, Faculty of Materials Science and Applied Chemistry, Riga Technical University, 3/7 Paula Valdena Str., LV-1048 Riga, Latvia
                [2 ]Institute of Applied Research, Vilnius University, Sauletekio Ave. 3, Vilnius 10222, Lithuania
                [3 ]Department of Semiconductor Physics, Vilnius University, Sauletekio Ave. 3, Vilnius 10222, Lithuania
                [4 ]Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., 1063 Riga, Latvia
                [5 ]Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
                Article
                10.1063/1.4945016
                dcfd44d6-7749-4274-8c9f-f4dccf2cd570
                © 2016
                History

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