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      Learning to Approximate Functions Using Nb-Doped SrTiO 3 Memristors

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          Abstract

          Memristors have attracted interest as neuromorphic computation elements because they show promise in enabling efficient hardware implementations of artificial neurons and synapses. We performed measurements on interface-type memristors to validate their use in neuromorphic hardware. Specifically, we utilized Nb-doped SrTiO 3 memristors as synapses in a simulated neural network by arranging them into differential synaptic pairs, with the weight of the connection given by the difference in normalized conductance values between the two paired memristors. This network learned to represent functions through a training process based on a novel supervised learning algorithm, during which discrete voltage pulses were applied to one of the two memristors in each pair. To simulate the fact that both the initial state of the physical memristive devices and the impact of each voltage pulse are unknown we injected noise into the simulation. Nevertheless, discrete updates based on local knowledge were shown to result in robust learning performance. Using this class of memristive devices as the synaptic weight element in a spiking neural network yields, to our knowledge, one of the first models of this kind, capable of learning to be a universal function approximator, and strongly suggests the suitability of these memristors for usage in future computing platforms.

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          Most cited references53

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          Optimization by simulated annealing.

          There is a deep and useful connection between statistical mechanics (the behavior of systems with many degrees of freedom in thermal equilibrium at a finite temperature) and multivariate or combinatorial optimization (finding the minimum of a given function depending on many parameters). A detailed analogy with annealing in solids provides a framework for optimization of the properties of very large and complex systems. This connection to statistical mechanics exposes new information and provides an unfamiliar perspective on traditional optimization problems and methods.
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            The missing memristor found.

            Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.
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              Resistive switching in transition metal oxides

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                Author and article information

                Contributors
                Journal
                Front Neurosci
                Front Neurosci
                Front. Neurosci.
                Frontiers in Neuroscience
                Frontiers Media S.A.
                1662-4548
                1662-453X
                19 February 2021
                2020
                : 14
                : 627276
                Affiliations
                [1] 1Groningen Cognitive Systems and Materials Center, University of Groningen , Groningen, Netherlands
                [2] 2Artificial Intelligence, Bernoulli Institute, University of Groningen , Groningen, Netherlands
                [3] 3Zernike Institute for Advanced Materials, University of Groningen , Groningen, Netherlands
                Author notes

                Edited by: Xiaobing Yan, Hebei University, China

                Reviewed by: Jiyong Woo, Kyungpook National University, South Korea; Zhongrui Wang, The University of Hong Kong, Hong Kong

                *Correspondence: Niels A. Taatgen n.a.taatgen@ 123456rug.nl

                This article was submitted to Neuromorphic Engineering, a section of the journal Frontiers in Neuroscience

                Article
                10.3389/fnins.2020.627276
                7933504
                db762fd6-60b6-4a7b-b4ed-0ba8da96586c
                Copyright © 2021 Tiotto, Goossens, Borst, Banerjee and Taatgen.

                This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

                History
                : 08 November 2020
                : 24 December 2020
                Page count
                Figures: 7, Tables: 2, Equations: 8, References: 53, Pages: 16, Words: 13463
                Categories
                Neuroscience
                Original Research

                Neurosciences
                neuromorphic computing,supervised learning,interface memristor,nb-doped srtio3,neural networks,spiking neural network,function approximation

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