LaMgGa 11O 19:Cr 3+ phosphor was synthesized successfully, showing broadband NIR emission centered at ∼770 nm, high efficiency and excellent thermal quenching resistance for pc-LEDs.
Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are desirable for in vivo imaging and applications for nondestructive examination in the food industry. Accordingly, it is very important to exploit highly efficient and stable broad-band NIR phosphors. Herein we report a Cr 3+-activated LaMgGa 11O 19 phosphor via a simple solid-state reaction, showing broad-band emission centered at 770 nm with internal/external quantum efficiency of 82.6%/42.5%. There are three six-coordinated octahedral crystallographic sites in the structure for Cr 3+ occupancy, and changing the Cr 3+ concentration can tune the NIR emission with tunable band centers from 715 to 800 nm. This spectral red-shift is mainly ascribed to energy transfer among multiple Cr 3+ sites, which is further confirmed by decay lifetime analysis. The phosphor also shows excellent luminescence thermal stability, and the photoluminescence intensity at 410 K maintains 87% of that at room temperature. Our work provides a novel broadband NIR emission phosphor with high efficiency and excellent thermal quenching resistance for the field of NIR spectroscopy.