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      Atomistic Observation of the Local Phase Transition in MoTe 2 for Application in Homojunction Photodetectors

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          Abstract

          Direct atomic‐scale observation of the local phase transition in transition metal dichalcogenides (TMDCs) is critically required to carry out in‐depth studies of their atomic structures and electronic features. However, the structural aspects including crystal symmetries tend to be unclear and unintuitive in real‐time monitoring of the phase transition process. Herein, by using in situ transmission electron microscopy, information about the phase transition mechanism of MoTe 2 from hexagonal structure (2H phase) to monoclinic structure (1T′ phase) driven by sublimation of Te atoms after a spike annealing is obtained directly. Furthermore, with the control of Te atom sublimation by modulating the hexagonal boron nitride (h‐BN) coverage in the desired area, the lateral 1T′‐enriched MoTe 2/2H MoTe 2 homojunction can be one‐step constructed via an annealing treatment. Owing to the gradient bandgap provided by 1T′‐enriched MoTe 2 and 2H MoTe 2, the photodetector composed of the 1T′‐enriched MoTe 2/2H MoTe 2 homojunction shows fast photoresponse and ten times larger photocurrents than that consisting of a pure 2H MoTe 2 channel. The study reveals a route to improve the performance of optoelectronic and electronic devices based on TMDCs with both semiconducting and semimetallic phases.

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          Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

          Ultrathin molybdenum disulphide (MoS2) has emerged as an interesting layered semiconductor because of its finite energy bandgap and the absence of dangling bonds. However, metals deposited on the semiconducting 2H phase usually form high-resistance (0.7 kΩ μm-10 kΩ μm) contacts, leading to Schottky-limited transport. In this study, we demonstrate that the metallic 1T phase of MoS2 can be locally induced on semiconducting 2H phase nanosheets, thus decreasing contact resistances to 200-300 Ω μm at zero gate bias. Field-effect transistors (FETs) with 1T phase electrodes fabricated and tested in air exhibit mobility values of ~50 cm(2) V(-1) s(-1), subthreshold swing values below 100 mV per decade, on/off ratios of >10(7), drive currents approaching ~100 μA μm(-1), and excellent current saturation. The deposition of different metals has limited influence on the FET performance, suggesting that the 1T/2H interface controls carrier injection into the channel. An increased reproducibility of the electrical characteristics is also obtained with our strategy based on phase engineering of MoS2.
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            Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2.

            Phase transitions can be used to alter the properties of a material without adding any additional atoms and are therefore of significant technological value. In a solid, phase transitions involve collective atomic displacements, but such atomic processes have so far only been investigated using macroscopic approaches. Here, we show that in situ scanning transmission electron microscopy can be used to follow the structural transformation between semiconducting (2H) and metallic (1T) phases in single-layered MoS2, with atomic resolution. The 2H/1T phase transition involves gliding atomic planes of sulphur and/or molybdenum and requires an intermediate phase (α-phase) as a precursor. The migration of two kinds of boundaries (β- and γ-boundaries) is also found to be responsible for the growth of the second phase. Furthermore, we show that areas of the 1T phase can be controllably grown in a layer of the 2H phase using an electron beam.
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              Bandgap opening in few-layered monoclinic MoTe2

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                Author and article information

                Contributors
                Journal
                Small
                Small
                Wiley
                1613-6810
                1613-6829
                May 2022
                April 11 2022
                May 2022
                : 18
                : 19
                Affiliations
                [1 ] State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 P. R. China
                [2 ] Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China
                [3 ] Shanghai Key Laboratory of Multidimensional Information Processing School of Communication and Electronic Engineering East China Normal University 500 Dongchuan Road Shanghai 200241 P. R. China
                [4 ] Department of Materials Science State Key Laboratory of ASIC and Systems Fudan University Shanghai 200433 P. R. China
                [5 ] Department of Physics Department of Materials Science and Engineering and Department of Biomedical Engineering City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong 999077 P. R. China
                Article
                10.1002/smll.202200913
                d42dd223-5eb8-472a-be44-bd7474736983
                © 2022

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