Synchrotron radiation photoemission analysis for (NH4)2Sx‐treated GaAs

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Most cited references 20

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New and unified model for Schottky barrier and III–V insulator interface states formation

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Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

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The advanced unified defect model for Schottky barrier formation

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Author and article information

Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: April 15 1991

Publication date (Print): April 15 1991

Volume: 69

Issue: 8

Pages: 4349-4353

Article

DOI: 10.1063/1.348380

SO-VID: d34f08f1-359e-404c-b610-c79f57598fad

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