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      Thickness scaling of ferroelectricity in BiFeO 3 by tomographic atomic force microscopy

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          Significance

          Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies on electrical and mechanical boundary conditions, resulting in finite size effects at length scales below several hundred nanometers. In ferroelectric thin films, equilibrium domain size is proportional to the square root of film thickness, which precludes the use of present tomographic microscopies to accurately resolve complex domain morphologies in submicrometer films. We report a subtractive experimental technique with volumetric resolution below 315 nm 3, that allows for three-dimensional, tomographic imaging of materials properties using only an atomic force microscope. Multiferroic BiFeO 3 was chosen as a model system for illustrating the capabilities of tomographic atomic force microscopy due to its technological relevance in low-power, electrically switchable magnetic logic.

          Abstract

          Nanometer-scale 3D imaging of materials properties is critical for understanding equilibrium states in electronic materials, as well as for optimization of device performance and reliability, even though such capabilities remain a substantial experimental challenge. Tomographic atomic force microscopy (TAFM) is presented as a subtractive scanning probe technique for high-resolution, 3D ferroelectric property measurements. Volumetric property resolution below 315 nm 3, as well as unit-cell-scale vertical material removal, are demonstrated. Specifically, TAFM is applied to investigate the size dependence of ferroelectricity in the room-temperature multiferroic BiFeO 3 across two decades of thickness to below 1 nm. TAFM enables volumetric imaging of ferroelectric domains in BiFeO 3 with a significant improvement in spatial resolution compared with existing domain tomography techniques. We additionally employ TAFM for direct, thickness-dependent measurements of the local spontaneous polarization and ferroelectric coercive field in BiFeO 3. The thickness-resolved ferroelectric properties strongly correlate with cross-sectional transmission electron microscopy (TEM), Landau–Ginzburg–Devonshire phenomenological theory, and the semiempirical Kay–Dunn scaling law for ferroelectric coercive fields. These results provide an unambiguous determination of a stable and switchable polar state in BiFeO 3 to thicknesses below 5 nm. The accuracy and utility of these findings on finite size effects in ferroelectric and multiferroic materials more broadly exemplifies the potential for novel insight into nanoscale 3D property measurements via other variations of TAFM.

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          Most cited references47

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          Deterministic switching of ferromagnetism at room temperature using an electric field.

          The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase multiferroic material exhibiting unambiguous magnetoelectric coupling at room temperature is BiFeO3 (refs 4 and 5). Its weak ferromagnetism arises from the canting of the antiferromagnetically aligned spins by the Dzyaloshinskii-Moriya (DM) interaction. Prior theory considered the symmetry of the thermodynamic ground state and concluded that direct 180-degree switching of the DM vector by the ferroelectric polarization was forbidden. Instead, we examined the kinetics of the switching process, something not considered previously in theoretical work. Here we show a deterministic reversal of the DM vector and canted moment using an electric field at room temperature. First-principles calculations reveal that the switching kinetics favours a two-step switching process. In each step the DM vector and polarization are coupled and 180-degree deterministic switching of magnetization hence becomes possible, in agreement with experimental observation. We exploit this switching to demonstrate energy-efficient control of a spin-valve device at room temperature. The energy per unit area required is approximately an order of magnitude less than that needed for spin-transfer torque switching. Given that the DM interaction is fundamental to single-phase multiferroics and magnetoelectrics, our results suggest ways to engineer magnetoelectric switching and tailor technologically pertinent functionality for nanometre-scale, low-energy-consumption, non-volatile magnetoelectronics.
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            Mechanical writing of ferroelectric polarization.

            Ferroelectric materials are characterized by a permanent electric dipole that can be reversed through the application of an external voltage, but a strong intrinsic coupling between polarization and deformation also causes all ferroelectrics to be piezoelectric, leading to applications in sensors and high-displacement actuators. A less explored property is flexoelectricity, the coupling between polarization and a strain gradient. We demonstrate that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film. Pure mechanical force can therefore be used as a dynamic tool for polarization control and may enable applications in which memory bits are written mechanically and read electrically.
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              Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films.

              Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A 'dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of approximately 1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.
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                Author and article information

                Journal
                Proc Natl Acad Sci U S A
                Proc. Natl. Acad. Sci. U.S.A
                pnas
                pnas
                PNAS
                Proceedings of the National Academy of Sciences of the United States of America
                National Academy of Sciences
                0027-8424
                1091-6490
                12 February 2019
                25 January 2019
                25 January 2019
                : 116
                : 7
                : 2413-2418
                Affiliations
                [1] aDepartment of Materials Science and Engineering, University of Connecticut , Storrs, CT 06269;
                [2] bInstitute of Materials Science, University of Connecticut , Storrs, CT 06269;
                [3] cDepartment of Materials Science and Engineering, University of California, Berkeley , CA 94720;
                [4] dDepartment of Physics, University of California, Berkeley , CA 94720;
                [5] eMaterials Science Division, Lawrence Berkeley National Laboratory , Berkeley, CA 94720
                Author notes
                2To whom correspondence should be addressed. Email: bryan.huey@ 123456uconn.edu .

                Edited by J. C. Séamus Davis, Cornell University, Ithaca, NY, and approved December 14, 2018 (received for review April 10, 2018)

                Author contributions: J.J.S., R.R., and B.D.H. designed research; J.J.S. and R.A.R. performed research; J.J.S., R.A.R., and B.D.H. analyzed data; and J.J.S., R.R., and B.D.H. wrote the paper.

                1Present address: Integration and Yield Engineering, GlobalFoundries, Hopewell Junction, NY 12533.

                Author information
                http://orcid.org/0000-0002-7891-2582
                http://orcid.org/0000-0002-1441-1180
                Article
                201806074
                10.1073/pnas.1806074116
                6377454
                30683718
                d191ffe2-0fba-49d4-bc5e-16d642b0895b
                Copyright © 2019 the Author(s). Published by PNAS.

                This open access article is distributed under Creative Commons Attribution-NonCommercial-NoDerivatives License 4.0 (CC BY-NC-ND).

                History
                Page count
                Pages: 6
                Funding
                Funded by: NSF:MRI:Development
                Award ID: 1726862
                Award Recipient : James J Steffes Award Recipient : Roger A Ristau Award Recipient : Bryan D. Huey
                Funded by: UConn/Thermo Fisher Scientific Center for Advanced Microscopy and Materials Analysis
                Award ID: 3136
                Award Recipient : James J Steffes Award Recipient : Roger A Ristau Award Recipient : Bryan D. Huey
                Categories
                Physical Sciences
                Applied Physical Sciences

                tomography,bifeo3,afm,ferroelectric,3d
                tomography, bifeo3, afm, ferroelectric, 3d

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