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      Memristor Based Binary Convolutional Neural Network Architecture With Configurable Neurons

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          Abstract

          The memristor-based convolutional neural network (CNN) gives full play to the advantages of memristive devices, such as low power consumption, high integration density, and strong network recognition capability. Consequently, it is very suitable for building a wearable embedded application system and has broad application prospects in image classification, speech recognition, and other fields. However, limited by the manufacturing process of memristive devices, high-precision weight devices are currently difficult to be applied in large-scale. In the same time, high-precision neuron activation function also further increases the complexity of network hardware implementation. In response to this, this paper proposes a configurable full-binary convolutional neural network (CFB-CNN) architecture, whose inputs, weights, and neurons are all binary values. The neurons are proportionally configured to two modes for different non-ideal situations. The architecture performance is verified based on the MNIST data set, and the influence of device yield and resistance fluctuations under different neuron configurations on network performance is also analyzed. The results show that the recognition accuracy of the 2-layer network is about 98.2%. When the yield rate is about 64% and the hidden neuron mode is configured as −1 and +1, namely ±1 MD, the CFB-CNN architecture achieves about 91.28% recognition accuracy. Whereas the resistance variation is about 26% and the hidden neuron mode configuration is 0 and 1, namely 01 MD, the CFB-CNN architecture gains about 93.43% recognition accuracy. Furthermore, memristors have been demonstrated as one of the most promising devices in neuromorphic computing for its synaptic plasticity. Therefore, the CFB-CNN architecture based on memristor is SNN-compatible, which is verified using the number of pulses to encode pixel values in this paper.

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          The missing memristor found.

          Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.
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            Neuromorphic electronic systems

            C Mead (1990)
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              Fully hardware-implemented memristor convolutional neural network

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                Author and article information

                Contributors
                Journal
                Front Neurosci
                Front Neurosci
                Front. Neurosci.
                Frontiers in Neuroscience
                Frontiers Media S.A.
                1662-4548
                1662-453X
                26 March 2021
                2021
                : 15
                : 639526
                Affiliations
                [1] 1College of Electronic Science and Technology, National University of Defense Technology , Changsha, China
                [2] 2College of Electrical and Information Engineering, Hunan University , Changsha, China
                Author notes

                Edited by: Zhongqiang Wang, Northeast Normal University, China

                Reviewed by: Rui Yang, Huazhong University of Science and Technology, China; S. G. Hu, University of Electronic Science and Technology of China, China

                *Correspondence: Haijun Liu, liuhaijun@ 123456nudt.edu.cn

                This article was submitted to Neuromorphic Engineering, a section of the journal Frontiers in Neuroscience

                Article
                10.3389/fnins.2021.639526
                8032997
                c85ab204-9b9a-4f3c-8eeb-19f486e63b19
                Copyright © 2021 Huang, Diao, Nie, Wang, Li, Li and Liu.

                This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

                History
                : 09 December 2020
                : 05 March 2021
                Page count
                Figures: 12, Tables: 3, Equations: 9, References: 22, Pages: 14, Words: 0
                Categories
                Neuroscience
                Original Research

                Neurosciences
                memristor,binarized neural networks,convolutional neural networks,device defects effect,configurable neuron,neuromorphic computing

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