Investigation of the Surface Coating, Humidity Degradation, and Recovery of Perovskite Film Phase for Solar-Cell Applications

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Abstract

Presently, we inquire about the organic/inorganic cation effect on different properties based on structure, morphology, and steadiness in preparing a one-step solution of APbI3 thin films, where A = MA, FA, Cs, using spin coating. This study was conducted to understand those properties well by incorporating device modeling using SCAPS-1D software and to upgrade their chemical composition. X-ray diffraction (XRD) was used to analyze the crystal structures. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were conducted to characterize the surface morphology; photoluminescence, Transmission Electron Microscopy (TEM), and a UV–Visible spectrometer helped us to study the optical properties. The (110) plane is where we found the perovskite’s crystalline structure. According to the XRD results and by changing the type of cation, we influence stabilization and the growth of the APbI3 absorber layer. Hither, a homogenous, smooth-surfaced, pinhole-free perovskite film and large grain size are results from the cesium cation. For the different cations, the band gap’s range, revealed by the optical analysis, is from 1.4 to 1.8 eV. Moreover, the stability of CsPbI3 remains excellent for two weeks and in a ~60% humid environment. Based on the UV–Visible spectrometer and photoluminescence characterization, a numerical analysis for fabricated samples was also performed for stability analysis by modeling standard solar-cell structures HTL/APbI3/ETL. Modeling findings are in good agreement with experimental results that CsPbI3 is more stable, showing a loss % in PCE of 14.28%, which is smaller in comparison to FAPbI3 (44.46%) and MAPbI3 (20.24%).

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Organometal halide perovskites as visible-light sensitizers for photovoltaic cells.

Akihiro Kojima, Kenjiro Teshima, Yasuo Shirai … (2009)

Two organolead halide perovskite nanocrystals, CH(3)NH(3)PbBr(3) and CH(3)NH(3)PbI(3), were found to efficiently sensitize TiO(2) for visible-light conversion in photoelectrochemical cells. When self-assembled on mesoporous TiO(2) films, the nanocrystalline perovskites exhibit strong band-gap absorptions as semiconductors. The CH(3)NH(3)PbI(3)-based photocell with spectral sensitivity of up to 800 nm yielded a solar energy conversion efficiency of 3.8%. The CH(3)NH(3)PbBr(3)-based cell showed a high photovoltage of 0.96 V with an external quantum conversion efficiency of 65%.

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Lead Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic Solar Cell with Efficiency Exceeding 9%

Hui-Seon Kim, Chang-Ryul Lee, Jeong-Hyeok Im … (2012)

We report on solid-state mesoscopic heterojunction solar cells employing nanoparticles (NPs) of methyl ammonium lead iodide (CH3NH3)PbI3 as light harvesters. The perovskite NPs were produced by reaction of methylammonium iodide with PbI2 and deposited onto a submicron-thick mesoscopic TiO2 film, whose pores were infiltrated with the hole-conductor spiro-MeOTAD. Illumination with standard AM-1.5 sunlight generated large photocurrents (JSC) exceeding 17 mA/cm2, an open circuit photovoltage (VOC) of 0.888 V and a fill factor (FF) of 0.62 yielding a power conversion efficiency (PCE) of 9.7%, the highest reported to date for such cells. Femto second laser studies combined with photo-induced absorption measurements showed charge separation to proceed via hole injection from the excited (CH3NH3)PbI3 NPs into the spiro-MeOTAD followed by electron transfer to the mesoscopic TiO2 film. The use of a solid hole conductor dramatically improved the device stability compared to (CH3NH3)PbI3 -sensitized liquid junction cells.

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Semiconducting tin and lead iodide perovskites with organic cations: phase transitions, high mobilities, and near-infrared photoluminescent properties.

Constantinos Stoumpos, Christos Malliakas, Mercouri Kanatzidis (2013)

A broad organic-inorganic series of hybrid metal iodide perovskites with the general formulation AMI3, where A is the methylammonium (CH3NH3(+)) or formamidinium (HC(NH2)2(+)) cation and M is Sn (1 and 2) or Pb (3 and 4) are reported. The compounds have been prepared through a variety of synthetic approaches, and the nature of the resulting materials is discussed in terms of their thermal stability and optical and electronic properties. We find that the chemical and physical properties of these materials strongly depend on the preparation method. Single crystal X-ray diffraction analysis of 1-4 classifies the compounds in the perovskite structural family. Structural phase transitions were observed and investigated by temperature-dependent single crystal X-ray diffraction in the 100-400 K range. The charge transport properties of the materials are discussed in conjunction with diffuse reflectance studies in the mid-IR region that display characteristic absorption features. Temperature-dependent studies show a strong dependence of the resistivity as a function of the crystal structure. Optical absorption measurements indicate that 1-4 behave as direct-gap semiconductors with energy band gaps distributed in the range of 1.25-1.75 eV. The compounds exhibit an intense near-IR photoluminescence (PL) emission in the 700-1000 nm range (1.1-1.7 eV) at room temperature. We show that solid solutions between the Sn and Pb compounds are readily accessible throughout the composition range. The optical properties such as energy band gap, emission intensity, and wavelength can be readily controlled as we show for the isostructural series of solid solutions CH3NH3Sn(1-x)Pb(x)I3 (5). The charge transport type in these materials was characterized by Seebeck coefficient and Hall-effect measurements. The compounds behave as p- or n-type semiconductors depending on the preparation method. The samples with the lowest carrier concentration are prepared from solution and are n-type; p-type samples can be obtained through solid state reactions exposed in air in a controllable manner. In the case of Sn compounds, there is a facile tendency toward oxidation which causes the materials to be doped with Sn(4+) and thus behave as p-type semiconductors displaying metal-like conductivity. The compounds appear to possess very high estimated electron and hole mobilities that exceed 2000 cm(2)/(V s) and 300 cm(2)/(V s), respectively, as shown in the case of CH3NH3SnI3 (1). We also compare the properties of the title hybrid materials with those of the "all-inorganic" CsSnI3 and CsPbI3 prepared using identical synthetic methods.