Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

Capasso, F; Tsang, W. T.; Hutchinson, A L; Williams, G. F.

doi:10.1063/1.92910

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Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

Author(s): F. Capasso , W. T. Tsang , A. L. Hutchinson , G. F. Williams

Publication date Created: January 1982

Publication date (Print): January 1982

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures

C Henry, W. Wiegmann, R. Dingle (1974)

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Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors

G. A. Baraff (1962)

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Ionization Rates of Holes and Electrons in Silicon

R. Batdorf, W. Wiegmann, C Lee … (1964)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: January 1982

Publication date (Print): January 1982

Volume: 40

Issue: 1

Pages: 38-40

Article

DOI: 10.1063/1.92910

SO-VID: c26b4a4e-fa11-455e-b391-7fd9c4daa198

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Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

Read this article at

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Electron Channelling Contrast Imaging (ECCI)

Most cited references 15

Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures

Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors

Ionization Rates of Holes and Electrons in Silicon

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