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      Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision

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          Generalized Gradient Approximation Made Simple

          John P Perdew, Kieron Burke, Matthias Ernzerhof (1997)
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            Electrical Properties of Silicon Containing Arsenic and Boron

            J Maita, F. Morin (1954)
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              Theory of Donor States in Silicon

              W. Kohn, J. M. Luttinger (1955)
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                Author and article information

                Contributors
                Quinn Campbell: (View ORCID Profile)
                Peter A. Schultz: (View ORCID Profile)
                Daniel R. Ward: (View ORCID Profile)
                Ezra Bussmann: (View ORCID Profile)
                Andrew D. Baczewski: (View ORCID Profile)
                Journal
                Journal ID (publisher-id): PRAHB2
                Title: Physical Review Applied
                Abbreviated Title: Phys. Rev. Applied
                Publisher: American Physical Society (APS)
                ISSN (Electronic): 2331-7019
                Publication date Created: November 2021
                Publication date (Electronic): November 18 2021
                Volume: 16
                Issue: 5
                Article
                DOI: 10.1103/PhysRevApplied.16.054037
                SO-VID: be8658c5-ec8e-4c91-87a9-cd89e5508998
                Copyright © © 2021
                License:

                https://creativecommons.org/licenses/by/4.0/

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