Chern-Simons theory of multi-component quantum Hall systems

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Abstract

The Chern-Simons approach has been widely used to explain fractional quantum Hall states in the framework of trial wave functions. In the present paper, we generalise the concept of Chern-Simons transformations to systems with any number of components (spin or pseudospin degrees of freedom), extending earlier results for systems with one or two components. We treat the density fluctuations by adding auxiliary gauge fields and appropriate constraints. The Hamiltonian is quadratic in these fields and hence can be treated as a harmonic oscillator Hamiltonian, with a ground state that is connected to the Halperin wave functions through the plasma analogy. We investigate several conditions on the coefficients of the Chern-Simons transformation and on the filling factors under which our model is valid. Furthermore, we discuss several singular cases, associated with symmetric states.

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The electronic properties of graphene

K. S. Novoselov, A. K. Geim, A. H. Castro Neto … (2007)

This article reviews the basic theoretical aspects of graphene, a one atom thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. We show that the Dirac electrons behave in unusual ways in tunneling, confinement, and integer quantum Hall effect. We discuss the electronic properties of graphene stacks and show that they vary with stacking order and number of layers. Edge (surface) states in graphene are strongly dependent on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. We also discuss how different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.