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      Heterostructure bipolar transistors and integrated circuits

      Proceedings of the IEEE
      Institute of Electrical and Electronics Engineers (IEEE)

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          Molecular beam epitaxy

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            Measurements of bandgap narrowing in Si bipolar transistors

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              Theory of a Wide-Gap Emitter for Transistors

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                Author and article information

                Journal
                Proceedings of the IEEE
                Proc. IEEE
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9219
                January 1982
                1982
                : 70
                : 1
                : 13-25
                Article
                10.1109/PROC.1982.12226
                b85a6c7e-c09d-4151-8571-a28a70a66e75
                © 1982
                History

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