β-Ga 2O 3 on Si (001) grown by plasma-assisted MBE with γ-Al 2O 3 (111) buffer layer: Structural characterization

Hadamek, Tobias; Posadas, Agham B; Al-Quaiti, Fatima; Smith, David J.; McCartney, Martha R.; Demkov, Alexander A

doi:10.1063/5.0044923

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β-Ga ₂O ₃ on Si (001) grown by plasma-assisted MBE with γ-Al ₂O ₃ (111) buffer layer: Structural characterization

Author(s): Tobias Hadamek ¹ , Agham B. Posadas ¹ , Fatima Al-Quaiti ² , David J. Smith ³ , Martha R. McCartney ³ , Alexander A. Demkov ¹

Publication date Created: April 01 2021

Publication date (Print): April 01 2021

Journal: AIP Advances

Publisher: AIP Publishing

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A review of Ga2O3 materials, processing, and devices

S Pearton, Jiancheng Yang, Michael Mastro … (2018)

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Thermodynamic stability of binary oxides in contact with silicon

D G Schlom, K. J. Hubbard (1996)

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Recent progress in Ga2O3power devices

Hisashi Murakami, Masataka Higashiwaki, Takekazu Masui … (2016)

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Alexander A. Demkov: (View ORCID Profile)

Journal

Title: AIP Advances

Abbreviated Title: AIP Advances

Publisher: AIP Publishing

ISSN (Electronic): 2158-3226

Publication date Created: April 01 2021

Publication date (Print): April 01 2021

Volume: 11

Issue: 4

Page: 045209

Affiliations

[1 ]Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

[2 ]Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, USA

[3 ]Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

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DOI: 10.1063/5.0044923

SO-VID: b7f3a760-45ba-4952-9d8f-22d29a9b27b4

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β-Ga ₂O ₃ on Si (001) grown by plasma-assisted MBE with γ-Al ₂O ₃ (111) buffer layer: Structural characterization

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Most cited references 71

A review of Ga2O3 materials, processing, and devices

Thermodynamic stability of binary oxides in contact with silicon

Recent progress in Ga2O3power devices

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