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      Progress and prospects of CZTSSe/CdS interface engineering to combat high open-circuit voltage deficit of kesterite photovoltaics: a critical review

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          Abstract

          We review critical aspects of interface engineering of the absorber–buffer heterojunction in CZTSSe solar cells and highlight the importance of tools that are essential to identify and eradicate the root causes of low efficiency.

          Abstract

          CZTSSe solar cells are considered to be potential and cost-effective alternative solutions to mature photovoltaic technology for meeting future energy demands. However, the current performance of CZTSSe solar cells is limited due to their high voltage deficit. The comparison of figure-of-merits of the two technologies show that CZTSSe has 62% lower open circuit voltage compared to that of 35% for CIGS, with respect to their associated band gaps. Efficient charge separation and extraction at the absorber–buffer (p–n) junction is paramount for mitigating the voltage loss and achieve high photo-conversion efficiency. The rapid progress for achieving high deliverables in CZTSSe is impeded by interface recombination, which is a consequence of poor-quality p–n junction. The inherent association of CZTSSe with secondary phases and defects due to narrow phase stability plays an unfavorable role in producing a good quality interface. The high density of interface defects, unfavorable band alignment, and structural inhomogeneities across the interface are some of the leading causes that nurture interface dominant recombination pathways. These interface-related concerns have drawn the scientific community towards interface engineering and modification of the interface to bring closer performance parity between CZTSSe and matured CIGS solar cell technology. Several approaches have attempted to develop favorable interface features that facilitate improved device performance. This work addresses the critical aspects of interface engineering of the absorber–buffer heterojunction in CZTSSe solar cells and the importance of tools that are essential to identify and eradicate the root causes of low efficiency.

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          Is Open Access

          Double-slit photoelectron interference in strong-field ionization of the neon dimer

          Wave-particle duality is an inherent peculiarity of the quantum world. The double-slit experiment has been frequently used for understanding different aspects of this fundamental concept. The occurrence of interference rests on the lack of which-way information and on the absence of decoherence mechanisms, which could scramble the wave fronts. Here, we report on the observation of two-center interference in the molecular-frame photoelectron momentum distribution upon ionization of the neon dimer by a strong laser field. Postselection of ions, which are measured in coincidence with electrons, allows choosing the symmetry of the residual ion, leading to observation of both, gerade and ungerade, types of interference.
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            Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

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              Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

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                Author and article information

                Contributors
                Journal
                JMCAET
                Journal of Materials Chemistry A
                J. Mater. Chem. A
                Royal Society of Chemistry (RSC)
                2050-7488
                2050-7496
                October 27 2020
                2020
                : 8
                : 41
                : 21547-21584
                Affiliations
                [1 ]Functional and Renewable Energy Materials Laboratory
                [2 ]Indian Institute of Technology Ropar
                [3 ]India
                Article
                10.1039/D0TA06450E
                aced3cd9-744b-4264-8c68-87a1f5ba3620
                © 2020

                http://rsc.li/journals-terms-of-use

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