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      Silicon/2D-material photodetectors: from near-infrared to mid-infrared

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          Abstract

          Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

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          Strong light-matter interactions in heterostructures of atomically thin films.

          The isolation of various two-dimensional (2D) materials, and the possibility to combine them in vertical stacks, has created a new paradigm in materials science: heterostructures based on 2D crystals. Such a concept has already proven fruitful for a number of electronic applications in the area of ultrathin and flexible devices. Here, we expand the range of such structures to photoactive ones by using semiconducting transition metal dichalcogenides (TMDCs)/graphene stacks. Van Hove singularities in the electronic density of states of TMDC guarantees enhanced light-matter interactions, leading to enhanced photon absorption and electron-hole creation (which are collected in transparent graphene electrodes). This allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).
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            Ultrasensitive photodetectors based on monolayer MoS2.

            Two-dimensional materials are an emerging class of new materials with a wide range of electrical properties and potential practical applications. Although graphene is the most well-studied two-dimensional material, single layers of other materials, such as insulating BN (ref. 2) and semiconducting MoS2 (refs 3, 4) or WSe2 (refs 5, 6), are gaining increasing attention as promising gate insulators and channel materials for field-effect transistors. Because monolayer MoS2 is a direct-bandgap semiconductor due to quantum-mechanical confinement, it could be suitable for applications in optoelectronic devices where the direct bandgap would allow a high absorption coefficient and efficient electron-hole pair generation under photoexcitation. Here, we demonstrate ultrasensitive monolayer MoS2 phototransistors with improved device mobility and ON current. Our devices show a maximum external photoresponsivity of 880 A W(-1) at a wavelength of 561 nm and a photoresponse in the 400-680 nm range. With recent developments in large-scale production techniques such as liquid-scale exfoliation and chemical vapour deposition-like growth, MoS2 shows important potential for applications in MoS2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy.
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              Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

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                Author and article information

                Contributors
                dxdai@zju.edu.cn
                Journal
                Light Sci Appl
                Light Sci Appl
                Light, Science & Applications
                Nature Publishing Group UK (London )
                2095-5545
                2047-7538
                9 June 2021
                9 June 2021
                2021
                : 10
                : 123
                Affiliations
                [1 ]GRID grid.13402.34, ISNI 0000 0004 1759 700X, State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, , Zhejiang University, ; Zijingang Campus, Hangzhou, 310058 China
                [2 ]GRID grid.13402.34, ISNI 0000 0004 1759 700X, Ningbo Research Institute, , Zhejiang University, ; Ningbo, 315100 China
                Author information
                http://orcid.org/0000-0003-3623-6990
                http://orcid.org/0000-0002-8749-0385
                Article
                551
                10.1038/s41377-021-00551-4
                8190178
                34108443
                ab0d2078-bcd5-425c-ac6a-c908cb2dc23b
                © The Author(s) 2021

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 19 December 2020
                : 21 April 2021
                : 6 May 2021
                Funding
                Funded by: FundRef https://doi.org/10.13039/501100002855, Ministry of Science and Technology of the People’s Republic of China (Chinese Ministry of Science and Technology);
                Award ID: 2018YFB2200200/2018YFB2200201
                Award Recipient :
                Funded by: FundRef https://doi.org/10.13039/501100001809, National Natural Science Foundation of China (National Science Foundation of China);
                Award ID: 61725503
                Award ID: 61961146003
                Award ID: 91950205
                Award ID: 61905210
                Award Recipient :
                Funded by: FundRef https://doi.org/10.13039/501100004731, Natural Science Foundation of Zhejiang Province (Zhejiang Provincial Natural Science Foundation);
                Award ID: LZ18F050001
                Award ID: LD19F050001
                Award Recipient :
                Funded by: The Fundamental Research Funds for the Central Universities
                Funded by: FundRef https://doi.org/10.13039/501100002858, China Postdoctoral Science Foundation;
                Award ID: 2020T130575
                Award ID: 2019M662041
                Award Recipient :
                Categories
                Review Article
                Custom metadata
                © The Author(s) 2021

                silicon photonics,optical properties and devices,optoelectronic devices and components

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