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      • Record: found
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      Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors

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          Hole Compensation Mechanism of P-Type GaN Films

          Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh … (1992)
          Article 0 comments Cited 226 times – based on 0 reviews     Review now
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            Hydrogen in GaN: Novel aspects of a common impurity.

            (1995)
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              Band offsets and optical bowings of chalcopyrites and Zn‐based II‐VI alloys

              Su-Huai Wei, Alex Zunger (1995)
              Article 0 comments Cited 87 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Advanced Electronic Materials
                Abbreviated Title: Adv. Electron. Mater.
                Publisher: Wiley
                ISSN: 2199160X
                Publication date Created: March 2017
                Publication date (Print): March 2017
                Publication date (Electronic): February 09 2017
                Volume: 3
                Issue: 3
                Page: 1600544
                Affiliations
                [1 ]National Renewable Energy Laboratory; Golden CO 80401 USA
                [2 ]Colorado School of Mines; Golden CO 80401 USA
                Article
                DOI: 10.1002/aelm.201600544
                SO-VID: a9c3fd83-6fb2-4bd0-b7f7-e4bf5861cae0
                Copyright © © 2017
                License:

                http://doi.wiley.com/10.1002/tdm_license_1.1

                http://onlinelibrary.wiley.com/termsAndConditions#am

                http://onlinelibrary.wiley.com/termsAndConditions#vor

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