A novel interface design of producing interfacial voids is proposed for CsPbIBr 2 perovskite solar cells (PSCs), which is free of any extra modification layer.
Interfacial voids improve absorption of CsPbIBr 2 film, reduce saturation current density, and enlarge built-in potential of the PSCs.
The PSC yields a superior efficiency of 10.20% with a record-high photovoltage of 1.338 V.
A novel interface design is proposed for carbon-based, all-inorganic CsPbIBr 2 perovskite solar cells (PSCs) by introducing interfacial voids between TiO 2 electron transport layer and CsPbIBr 2 absorber. Compared with the general interfacial engineering strategies, this design exempts any extra modification layer in final PSC. More importantly, the interfacial voids produced by thermal decomposition of 2-phenylethylammonium iodide trigger three beneficial effects. First, they promote the light scattering in CsPbIBr 2 film and thereby boost absorption ability of the resulting CsPbIBr 2 PSCs. Second, they suppress recombination of charge carriers and thus reduce dark saturation current density ( J 0) of the PSCs. Third, interfacial voids enlarge built-in potential ( V bi) of the PSCs, awarding increased driving force for dissociating photo-generated charge carriers. Consequently, the PSC yields the optimized efficiency of 10.20% coupled with an open-circuit voltage ( V oc) of 1.338 V. The V oc achieved herein represents the best value among CsPbIBr 2 PSCs reported earlier. Meanwhile, the non-encapsulated PSCs exhibit an excellent stability against light, thermal, and humidity stresses, since it remains ~ 97% or ~ 94% of its initial efficiency after being heated at 85 °C for 12 h or stored in ambient atmosphere with relative humidity of 30–40% for 60 days, respectively.