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      Interfacial Voids Trigger Carbon-Based, All-Inorganic CsPbIBr 2 Perovskite Solar Cells with Photovoltage Exceeding 1.33 V

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          Highlights

          • A novel interface design of producing interfacial voids is proposed for CsPbIBr 2 perovskite solar cells (PSCs), which is free of any extra modification layer.

          • Interfacial voids improve absorption of CsPbIBr 2 film, reduce saturation current density, and enlarge built-in potential of the PSCs.

          • The PSC yields a superior efficiency of 10.20% with a record-high photovoltage of 1.338 V.

          Electronic supplementary material

          The online version of this article (10.1007/s40820-020-00425-1) contains supplementary material, which is available to authorized users.

          Abstract

          A novel interface design is proposed for carbon-based, all-inorganic CsPbIBr 2 perovskite solar cells (PSCs) by introducing interfacial voids between TiO 2 electron transport layer and CsPbIBr 2 absorber. Compared with the general interfacial engineering strategies, this design exempts any extra modification layer in final PSC. More importantly, the interfacial voids produced by thermal decomposition of 2-phenylethylammonium iodide trigger three beneficial effects. First, they promote the light scattering in CsPbIBr 2 film and thereby boost absorption ability of the resulting CsPbIBr 2 PSCs. Second, they suppress recombination of charge carriers and thus reduce dark saturation current density ( J 0) of the PSCs. Third, interfacial voids enlarge built-in potential ( V bi) of the PSCs, awarding increased driving force for dissociating photo-generated charge carriers. Consequently, the PSC yields the optimized efficiency of 10.20% coupled with an open-circuit voltage ( V oc) of 1.338 V. The V oc achieved herein represents the best value among CsPbIBr 2 PSCs reported earlier. Meanwhile, the non-encapsulated PSCs exhibit an excellent stability against light, thermal, and humidity stresses, since it remains ~ 97% or ~ 94% of its initial efficiency after being heated at 85 °C for 12 h or stored in ambient atmosphere with relative humidity of 30–40% for 60 days, respectively.

          Electronic supplementary material

          The online version of this article (10.1007/s40820-020-00425-1) contains supplementary material, which is available to authorized users.

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          Organometal halide perovskites as visible-light sensitizers for photovoltaic cells.

          Two organolead halide perovskite nanocrystals, CH(3)NH(3)PbBr(3) and CH(3)NH(3)PbI(3), were found to efficiently sensitize TiO(2) for visible-light conversion in photoelectrochemical cells. When self-assembled on mesoporous TiO(2) films, the nanocrystalline perovskites exhibit strong band-gap absorptions as semiconductors. The CH(3)NH(3)PbI(3)-based photocell with spectral sensitivity of up to 800 nm yielded a solar energy conversion efficiency of 3.8%. The CH(3)NH(3)PbBr(3)-based cell showed a high photovoltage of 0.96 V with an external quantum conversion efficiency of 65%.
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            Surface passivation of perovskite film for efficient solar cells

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              Non-wetting surface-driven high-aspect-ratio crystalline grain growth for efficient hybrid perovskite solar cells

              Large-aspect-ratio grains are needed in polycrystalline thin-film solar cells for reduced charge recombination at grain boundaries; however, the grain size in organolead trihalide perovskite (OTP) films is generally limited by the film thickness. Here we report the growth of OTP grains with high average aspect ratio of 2.3–7.9 on a wide range of non-wetting hole transport layers (HTLs), which increase nucleus spacing by suppressing heterogeneous nucleation and facilitate grain boundary migration in grain growth by imposing less drag force. The reduced grain boundary area and improved crystallinity dramatically reduce the charge recombination in OTP thin films to the level in OTP single crystals. Combining the high work function of several HTLs, a high stabilized device efficiency of 18.3% in low-temperature-processed planar-heterojunction OTP devices under 1 sun illumination is achieved. This simple method in enhancing OTP morphology paves the way for its application in other optoelectronic devices for enhanced performance.
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                Author and article information

                Contributors
                wdzhu@xidian.edu.cn
                cfzhang@xidian.edu.cn
                Journal
                Nanomicro Lett
                Nanomicro Lett
                Nano-Micro Letters
                Springer Singapore (Singapore )
                2311-6706
                2150-5551
                6 April 2020
                6 April 2020
                December 2020
                : 12
                : 87
                Affiliations
                [1 ]GRID grid.440736.2, ISNI 0000 0001 0707 115X, State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, , Xidian University, ; Xi’an, 710071 People’s Republic of China
                [2 ]GRID grid.440727.2, ISNI 0000 0001 0608 387X, College of Science, , Xi’an Shiyou University, ; Xi’an, 710065 Shaanxi People’s Republic of China
                Article
                425
                10.1007/s40820-020-00425-1
                7770772
                a96456cc-8e07-41ec-a2d0-fdb170248a37
                © The Author(s) 2020

                Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 15 January 2020
                : 28 February 2020
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                © The Author(s) 2020

                all-inorganic perovskite solar cells,cspbibr2,photovoltage,interfacial engineering,stability

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