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      Novel Magnetic Field Modulation Concept Using Multiferroic Heterostructure for Magnetoresistive Sensors

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          Abstract

          The low frequency magnetic field detection ability of magnetoresistive (MR)sensor is seriously affected by 1/f noise. At present, the method to suppress the influence of low frequency noise is mainly to modulate the measured magnetic field by mechanical resonance. In this paper, a novel modulation concept employing a magnetoelectric coupling effect is proposed. A design method of modulation structure based on an equivalent magnetic circuit model (EMCM) and a single domain model of in-plane moment was established. An EMCM was established to examine the relationship between the permeability of flux modulation film (FMF) and modulation efficiency, which was further verified through a finite element simulation model (FESM). Then, the permeability modulated by the voltage of a ferroelectric/ferromagnetic (FE/FM) multiferroic heterostructure was theoretically studied. Combining these studies, the modulation structure and the material were further optimized, and a FeSiBPC/PMN-PT sample was prepared. Experimental results show that the actual magnetic susceptibility modulation ability of FeSiBPC/PMN-PT reached 150 times, and is in good agreement with the theoretical prediction. A theoretical modulation efficiency higher than 73% driven by a voltage of 10 V in FeSiBPC/PMN-PT can be obtained. These studies show a new concept for magnetoelectric coupling application, and establish a new method for magnetic field modulation with a multiferroic heterostructure.

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          Most cited references35

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          Electric-field control of magnetic domain wall motion and local magnetization reversal

          Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics.
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            Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature.

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              Voltage tuning of ferromagnetic resonance with bistable magnetization switching in energy-efficient magnetoelectric composites.

              Dual E- and H-field control of microwave performance with enhanced ferromagnetic resonance (FMR) tunability has been demonstrated in microwave composites FeGaB/PZN-PT(011). A voltage-impulse-induced non-volatile magnetization switching was also realized in this work, resulting from the hysteretic type of phase transition in PZN-PT(011) at high electric fields. The results provide a framework for developing lightweight, energy efficient, voltage-tunable RF/microwave devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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                Author and article information

                Journal
                Sensors (Basel)
                Sensors (Basel)
                sensors
                Sensors (Basel, Switzerland)
                MDPI
                1424-8220
                06 March 2020
                March 2020
                : 20
                : 5
                : 1440
                Affiliations
                [1 ]College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, Hunan, China; plong_2017@ 123456163.com (L.P.); pmc_nudt@ 123456vip.163.com (M.P.); garfield_nudt@ 123456163.com (J.H.); huyueguo1991@ 123456163.com (Y.H.); cheyulubill@ 123456163.com (Y.C.); yuyang0316@ 123456hotmail.com (Y.Y.); 2008qiuweicheng@ 123456sina.com (W.Q.); lips13@ 123456163.com (P.L.)
                [2 ]School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, China; wangnan0917@ 123456zju.edu.cn (N.W.); jiangjz@ 123456zju.edu.cn (J.J.)
                Author notes
                [* ]Correspondence: junpingpeng@ 123456126.com
                Author information
                https://orcid.org/0000-0003-4670-5615
                Article
                sensors-20-01440
                10.3390/s20051440
                7085550
                32155770
                a95bce1d-92a3-43b8-ad51-e855887367a1
                © 2020 by the authors.

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                : 01 February 2020
                : 02 March 2020
                Categories
                Article

                Biomedical engineering
                mr magnetic sensors,suppress 1/f noise,ferroelectric/ferromagnetic multiferroic heterostructure,equivalent magnetic circuit model

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