Comprehensive Polarity Regulation of WSe <sub>2</sub> Field‐Effect Transistors Enabled by Combining Contact Engineering and Plasma Doping

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Abstract

Two‐dimensional semiconductors are considered as promising candidates in next‐generation nanoelectronics. The polarity regulation, however, has been a great obstacle to their applications. Herein, a strategy to comprehensively modulate the polarity of WSe ₂ field‐effect transistors (FETs) by combining contact engineering and plasma doping is demonstrated. N‐type and ambipolar WSe ₂ FETs are obtained by indium (In) and chromium (Cr) contact, respectively. Meanwhile Cr contact and mild oxygen plasma doping are employed simultaneously to realize p‐type WSe ₂ FET. High on/off ratio of ≈10 ⁷ has been achieved for both n‐type and p‐type WSe ₂ FETs. Subsequently, they are connected in series to construct a homogeneous complementary logic inverter and a lateral p–n diode. Anti‐ambipolar transfer characteristics, therefore, are accessed from the inverter. And the forward to backward rectifying ratio reaches 10 ⁶ for the p–n diode. The proposed strategy paves the way for practical applications of WSe ₂ FETs in logic circuits and optoelectronics.

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Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

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Author and article information

Contributors

Xiaochi Liu: (View ORCID Profile)

Wenchen Luo: (View ORCID Profile)

Journal

Title: physica status solidi (RRL) – Rapid Research Letters

Abbreviated Title: Physica Rapid Research Ltrs

Publisher: Wiley

ISSN (Print): 1862-6254

ISSN (Electronic): 1862-6270

Publication date Created: May 2023

Publication date (Electronic): January 20 2023

Publication date (Print): May 2023

Volume: 17

Issue: 5

Affiliations

[1 ] School of Physics and Electronics Central South University 932 South Lushan Road Changsha 410083 China

Article

DOI: 10.1002/pssr.202200466

SO-VID: a368fea0-915f-4729-928a-e820ee0ec105

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http://onlinelibrary.wiley.com/termsAndConditions#vor

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